Voltage controlled spin precession in InAs quantum wells

TL;DR

This paper studies how gate voltage influences spin diffusion in InAs quantum wells with Rashba spin-orbit coupling, highlighting the role of scattering and supporting some aspects of the Datta-Das spin transistor concept.

Contribution

It provides a detailed analysis of spin diffusion modulation by gate voltage in InAs quantum wells, including the effects of temperature and scattering.

Findings

Gate voltage affects spin diffusion in InAs quantum wells.

Scattering significantly influences spin diffusion behavior.

Results partially support the realization of the Datta-Das spin transistor.

Abstract

In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the scattering explicitly included. Our result partially supports the claim of the realization of the Datta-Das spin-injected field effect transistor by Koo {\it et al.} [Science {\bf 325}, 1515 (2009)]. We also show that the scattering plays an important role in spin diffusion in such a system.