Charged basal stacking fault (BSF) scattering in nitride semiconductors

TL;DR

This paper develops a theory for charge transport in nitride semiconductors affected by basal stacking faults, revealing anisotropic carrier movement and validating the model with experimental data on GaN films.

Contribution

It introduces a novel theoretical framework for understanding how basal stacking faults influence charge transport in nitride semiconductors.

Findings

Basal stacking faults cause anisotropic carrier transport.

The theory aligns well with experimental data on GaN films.

Charge scattering by BSFs significantly impacts device performance.

Abstract

A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in non-polar GaN films consisting of a large number BSFs, and the result is compared with experimental data.