Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Debdeep Jena, John Simon, Albert (Kejia) Wang, Yu Cao, Kevin Goodman,, Jai Verma, Satyaki Ganguly, Guowang Li, Kamal Karda, Vladimir Protasenko,, Chuanxin Lian, Thomas Kosel, Patrick Fay, Huili Xing
TL;DR
This paper explores how polarization effects in III-V nitride heterostructures can be engineered to create new opportunities for device design, addressing challenges and potential benefits.
Contribution
It provides a comprehensive discussion on polarization engineering in nitride heterostructures, highlighting new design opportunities and addressing existing problems.
Findings
Polarization effects significantly influence device performance.
Engineering polarization can enable novel device functionalities.
Challenges in heterojunction fabrication are identified and discussed.
Abstract
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
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