Atomic-scale compensation phenomena at polar interfaces
Matthew F. Chisholm, Weidong Luo, Mark P. Oxley, Sokrates T., Pantelides, and Ho Nyung Lee

TL;DR
This paper investigates atomic-scale compensation mechanisms at polar interfaces, revealing ionic screening and interfacial charge generation as key factors influencing ferroelectric properties at the nanoscale.
Contribution
It provides the first experimental evidence of ionic screening at ferroelectric interfaces and explores how interfacial charge compensates polarization in ultrathin ferroelectrics.
Findings
Evidence for ionic screening at ferroelectric interfaces
Interfacial charge generated by oxygen vacancies
Implications for ultrathin ferroelectric device performance
Abstract
The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by interfacial charge generated, for example, by oxygen vacancies.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
