Bulk and Surface Nanoscale Hole Density Inhomogeneity in HgBa$_2$CuO$_{4+\delta}$ and Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ Cuprates
Wei Chen, Oleg P. Sushkov, Giniyat Khaliullin

TL;DR
This study reveals that hole density inhomogeneity in HgBa$_2$CuO$_{4+eta}$ and Bi$_2$Sr$_2$CaCu$_2$O$_{8+eta}$ is comparable to La$_{2-x}$Sr$_x$CuO$_4$, with implications for their superconducting properties.
Contribution
The paper provides computational evidence that charge inhomogeneity in HgBa$_2$CuO$_{4+eta}$ is similar to La$_{2-x}$Sr$_x$CuO$_4$, challenging previous assumptions of uniformity.
Findings
Charge inhomogeneity is most pronounced at the surface layer.
Hole mean free path in HgBa$_2$CuO$_{4+eta}$ is longer than in La$_{2-x}$Sr$_x$CuO$_4$.
Screening of Coulomb repulsion is stronger in HgBa$_2$CuO$_{4+eta}$.
Abstract
It is well established that the hole density in the prototypical superconductor LaSrCuO is very inhomogeneous due to Sr-dopant induced disorder. On the other hand, until recently it is widely believed that the hole distribution in HgBaCuO and BiSrCaCuO doped by interstitial oxygen is much more uniform. Recent nuclear magnetic resonance measurements indicate, however, that the charge inhomogeneity in HgBaCuO is close to that in LaSrCuO. Calculations performed in the present paper confirm this observation. We also show that the charge inhomogeneity is most pronounced at the surface layer that can be probed by scanning tunneling microscope. Our simulations demonstrate that, despite having similar amplitudes of charge inhomogeneity, the hole mean free path in HgBaCuO is substantially…
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