Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies

TL;DR

This paper reveals that silicon oxide (SiOx) exhibits intrinsic electrical phenomena like resistive switching and hysteresis, which can mimic molecular or nanomaterial behaviors, thus caution is needed when interpreting such effects in electronic systems.

Contribution

The study demonstrates that SiOx surfaces can produce electrical effects similar to those attributed to molecules or nanomaterials, highlighting the need for careful analysis in molecular electronics.

Findings

SiOx exhibits negative differential resistance

Resistive switching and current hysteresis are intrinsic to SiOx

Electrical phenomena in SiOx can mimic molecular effects

Abstract

Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current hysteresis intrinsic to a thin layer of SiOx. These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiOx as a component. The actual switching can be the result of SiOx and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.