Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

TL;DR

This paper reports on Coulomb oscillations observed in indium-doped ZnO nanowire transistors under magnetic fields, revealing quantum dot behavior, magnetoresistance effects, and electron wavefunction modifications up to 20 K.

Contribution

It demonstrates magnetic field effects on Coulomb oscillations and electron wavefunctions in ZnO nanowire transistors, a novel observation in this material system.

Findings

Coulomb oscillations observed up to 20 K

Positive anisotropic magnetoresistance detected

Magnetic field enhances oscillation amplitude

Abstract

We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots.