Microstructural and dielectric properties of Ba0.6Sr0.4Ti1-xZrxO3 based combinatorial thin film capacitors library

TL;DR

This study explores how Zr doping affects the microstructure and dielectric properties of Ba0.6Sr0.4Ti1-xZrxO3 thin films, revealing composition-dependent variations and optimal doping windows for enhanced capacitive performance.

Contribution

It provides a detailed analysis of microstructural evolution and dielectric behavior in a compositional library created via combinatorial pulsed laser deposition.

Findings

Zr doping causes microstructural changes influenced by epitaxial stress.

Identified doping ranges with improved permittivity and tunability.

Dielectric properties vary unexpectedly with composition and temperature.

Abstract

Epitaxial growth of Ba0.6Sr0.4Ti1-xZrxO3 (0/leqx\leq0.3) composition spread thin film library on SrRuO3/SrTiO3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations of the dielectric properties. Doping windows with enhanced permittivity and tunability are identified, and correlated to microstructural properties.