Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension: Novel attributes and Design considerations for Suppressed Short-channel Effects

TL;DR

This paper explores the design of nanoscale SOI-MOSFETs with electrically induced source/drain extensions, demonstrating improved control of short-channel effects and breakdown voltage through simulation, especially when side gate length matches main gate length.

Contribution

It introduces a novel design approach using electrically induced source/drain extensions to mitigate short-channel effects in sub-50 nm SOI MOSFETs.

Findings

Induced source/drain extensions effectively control SCEs.

Breakdown voltage improves with induced extensions.

Hot electron effects diminish when side gate equals main gate length.

Abstract

Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that the application of induced source/drain extensions to the SOI MOSFET will successfully control the SCEs and improve the breakdown voltage even for channel lengths less than 50 nm. We conclude that if the side gate length equals the main gate length, the hot electron effect diminishes optimally.