Control of defect-mediated tunneling barrier heights in ultrathin MgO films
D. J. Kim, W. S. Choi, F. Schleicher, R. H. Shin, S. Boukari, V., Davesne, C. Kieber, J. Arabski, G. Schmerber, E. Beaurepaire, W. Jo, M. Bowen

TL;DR
This study investigates how controlling oxygen vacancies in ultrathin MgO films affects tunneling properties, showing that oxygen defect management improves local tunneling behavior and reduces hotspots.
Contribution
It demonstrates that adjusting oxygen defect populations during MgO growth enhances tunneling characteristics by reducing defect-related hotspots.
Findings
Lower density of current hotspots in MgO films
Reduced tunnel current amplitude with oxygen defect control
Defect-based potential landscape influences tunneling behavior
Abstract
The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amplitude. We discuss a defect-based potential landscape across ultrathin MgO barriers.
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