Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene
M. Orlita, C. Faugeras, J. Borysiuk, J. M. Baranowski, W. Strupinski,, M. Sprinkle, C. Berger, W. A. de Heer, D. M. Basko, G. Martinez, and M., Potemski
TL;DR
This paper identifies bilayer graphene inclusions within multilayer epitaxial graphene on SiC, demonstrating their potential as a precise platform for magneto-spectroscopy of graphene bilayers, revealing their electronic properties.
Contribution
It reveals the presence of AB-stacked graphene bilayer inclusions in multilayer epitaxial graphene and highlights their use for accurate magneto-spectroscopy.
Findings
Inclusions exhibit characteristic electronic properties of AB-stacked bilayer graphene.
Magneto-optical response confirms the bilayer nature of inclusions.
Provides a platform for studying unperturbed graphene bilayers.
Abstract
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
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