Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Carbon Nanotubes
Misun Cha, Seungwon Jung, Moon-Hyun Cha, Gunn Kim, Jisoon Ihm, and, Junghoon Lee

TL;DR
This study demonstrates that wrapping ssDNA around single-walled carbon nanotubes induces a reversible transition from metallic to p-type semiconducting behavior, activated by water, confirmed through FET measurements, Raman spectroscopy, and ab initio calculations.
Contribution
It reveals a water-activated, reversible metal-semiconductor transition in ssDNA-decorated SWNTs, combining experimental and theoretical insights.
Findings
Water activates the transition in SWNT-ssDNA hybrids.
Raman spectroscopy confirms the change in electrical behavior.
Ab initio calculations show band gap opening due to charge transfer.
Abstract
A field effect transistor (FET) measurement of a SWNT shows a transition from a metallic one to a p-type semiconductor after helical wrapping of DNA. Water is found to be critical to activate this metal-semiconductor transition in the SWNT-ssDNA hybrid. Raman spectroscopy confirms the same change in electrical behavior. According to our ab initio calculations, a band gap can open up in a metallic SWNT with wrapped ssDNA in the presence of water molecules due to charge transfer.
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