High-energy long-lived resonance of electrons in fractal-like semiconductor heterostructures

TL;DR

This paper demonstrates that fractal-like arrangements of quantum wells in GaAs/AlGaAs heterostructures can host high-energy, long-lived electron resonant states with potential applications in quantum devices.

Contribution

It introduces a novel fractal-like quantum well structure that supports long-lived high-energy electron resonances, advancing quantum heterostructure design.

Findings

Resonant state energy up to 44 meV

Lifetime of resonant states up to 2.8 microseconds

Feasibility in GaAs/AlGaAs heterostructures

Abstract

A fractal-like alignment of quantum wells is shown to accommodate resonant states with long lifetimes. For the parameters of the semiconductor heterostructure GaAs/Al$_{0.4}$Ga$_{0.6}$As with the well depth 300meV, a resonant state of the energy as high as 44meV with the lifetime as long as 2.8\{mu}s is shown to be achievable.