Triple-Mode Single-Transistor Graphene Amplifier and Its Applications

TL;DR

This paper introduces a novel triple-mode single-transistor graphene amplifier that leverages graphene's ambipolar properties, enabling versatile operation modes for advanced wireless communication and integrated analog circuit applications.

Contribution

The work demonstrates a new triple-mode amplifier using a single graphene transistor, expanding functionality beyond traditional unipolar semiconductor devices.

Findings

Achieved operation in three modes: common-source, common-drain, and frequency multiplication.

Enabled in-field reconfigurability of amplifier modes via gate bias adjustments.

Potential for simplified, high-density analog circuit design in communications.

Abstract

In this article, we propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.