High-performance $n$-type organic field-effect transistors with ionic liquid gates

TL;DR

This paper demonstrates high-performance n-type organic transistors with ionic-liquid gates that operate reliably in ambient conditions, achieving high mobility without sacrificing device quality or requiring vacuum environments.

Contribution

It introduces ionic-liquid gating for n-type organic transistors, enabling high mobility and ambient operation without compromising device performance.

Findings

Mobility up to 5.0 cm²/Vs in ambient atmosphere

Ionic-liquid gates do not reduce electron mobility

Devices operate reliably with negligible threshold voltage

Abstract

High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm$^2$/Vs. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and $n$-type organic semiconductor interfaces are suitable to realize high-quality $n$-type organic transistors operating at small gate voltage, without sacrificing electron mobility.