Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite

TL;DR

This study investigates the quantum Hall effect and related transport phenomena in highly oriented pyrolytic graphite, revealing unique Berry's phase characteristics and a resistivity rule consistent with oscillatory behavior.

Contribution

It provides the first detailed transport analysis of Berry's phase and resistivity rule in graphite, highlighting its distinct quantum Hall features compared to other 2D and 3D systems.

Findings

Observation of Hall plateaus and resistivity oscillations at low temperatures

Graphite exhibits a Berry's phase different from typical 2D electron systems

Transport data follow a B×dR_{xy}/dB ≈ - ΔR_{xx} relation

Abstract

Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting $Hg_{0.8}Cd_{0.2}Te$, and some other systems. Finally, we observe the transport data to follow $B\times dR_{xy}/dB \approx - \Delta R_{xx}$. This feature is consistent with the observed relative phases of the oscillatory $R_{xx}$ and $R_{xy}$.