Reverse Schottky-Asymmetry Spin Current Detectors

TL;DR

This paper demonstrates a novel spin detector design that achieves over 50% spin polarization in silicon and operates at temperatures up to 260K by reversing Schottky barrier asymmetry, improving spin transport detection.

Contribution

The study introduces a reversed Schottky barrier asymmetry approach to enhance spin detection efficiency and temperature range in silicon-based spin detectors.

Findings

Achieved >50% spin polarization in silicon.

Demonstrated spin transport at 260K.

Eliminated ferromagnet/silicon interface on the detector contact.

Abstract

By reversing the Schottky barrier-height asymmetry in hot-electron semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved: 1. Demonstration of >50% spin polarization in silicon, resulting from elimination of the ferromagnet/silicon interface on the transport channel detector contact, and 2. Evidence of spin transport at temperatures as high as 260K, enabled by an increase of detector Schottky barrier height.