Hall-effect and resistivity measurements in CdTe and ZnTe at high pressure: Electronic structure of impurities in the zincblende phase and the semi-metallic or metallic character of the high-pressure phases
D. Errandonea, A. Segura, D. Martinez-Garcia, and V. Munoz

TL;DR
This study investigates the electronic structure and phase transitions of CdTe and ZnTe under high pressure through resistivity and Hall-effect measurements, revealing significant changes in carrier behavior and metallicity at specific pressure points.
Contribution
It provides new insights into the pressure-induced electronic and structural phase transitions of CdTe and ZnTe, including the characterization of impurity levels and metallic phases.
Findings
Carrier concentration increases dramatically near phase transitions.
Metallic character confirmed in high-pressure phases.
Deep-to-shallow acceptor level transformation in ZnTe.
Abstract
We carried out high-pressure resistivity and Hall-effect measurements in single crystals of CdTe and ZnTe up to 12 GPa. Slight changes of transport parameters in the zincblende phase of CdTe are consitent with the shallow character of donor impurities. Drastic changes in all the transport parameters of CdTe were found around 4 GPa, i.e. close to the onset of the cinnabar to rock-salt transition. In particular, the carrier concentration increases by more than five orders of magnitude. Additionally, an abrupt decrease of the resistivity was detected around 10 GPa. These results are discussed in comparison with optical, thermoelectric, and x-ray diffraction experiments. The metallic character of the Cmcm phase of CdTe is confirmed and a semi-metallic character is determined for the rock-salt phase. In zincblende ZnTe, the increase of the hole concentration by more than two orders of…
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