Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures
L.K. Alexander, N. Suwuntanasarn, W.D. Hutchison

TL;DR
This paper investigates the coherence times of phosphorus donor spins in isotopically pure silicon at very low temperatures, revealing unexpected variations in spin coherence related to phosphorus concentration.
Contribution
It provides new measurements of phosphorus spin coherence times at ultra-low temperatures and highlights the unexpected dependence on phosphorus concentration.
Findings
Spin coherence times vary unexpectedly with phosphorus concentration.
Measurements were performed using pulsed electron spin resonance.
Results contribute to understanding spin dynamics in silicon for quantum applications.
Abstract
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus concentration
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Taxonomy
TopicsSemiconductor materials and interfaces · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design
