Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices

TL;DR

This paper investigates how boundary scattering and device dimensions affect low-temperature electron transport in InSb/InxAl1-xSb mesoscopic devices, revealing the significant role of diffuse boundary scattering in ballistic transport phenomena.

Contribution

It demonstrates the impact of boundary scattering on electron transport and provides a classical billiard ball model that aligns with experimental results.

Findings

Diffuse boundary scattering enhances negative bend resistance.

Good agreement between experiments and classical billiard simulations.

Boundary effects are crucial in mesoscopic device transport properties.

Abstract

We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.