Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation
C. Drexler, V.V. Bel'kov, B. Ashkinadze, P. Olbrich, C. Zoth, V., Lechner, Ya.V. Terent'ev, D.R. Yakovlev, G. Karczewski, T. Wojtowicz, D., Schuh, W. Wegscheider, S.D. Ganichev

TL;DR
This paper demonstrates how microwave radiation can induce spin-polarized electric currents in semiconductor quantum wells through spin-dependent energy relaxation and magnetic field effects.
Contribution
It reveals a novel mechanism for generating spin-polarized currents via microwave-induced spin relaxation in semiconductor heterostructures.
Findings
Microwave radiation induces electric currents in quantum wells.
Spin-dependent energy relaxation creates pure spin currents.
Magnetic fields convert spin flows into spin-polarized electric currents.
Abstract
We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current.
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