Bipolar Transistor Based on Graphane

TL;DR

This paper predicts the behavior of bipolar junction transistors made from graphane, a hydrogenated form of graphene, highlighting their potential for small reverse current p-n junctions and ideal I-V characteristics.

Contribution

It introduces the concept of graphane-based bipolar transistors and analyzes their carrier profiles and intrinsic parameters, a novel application of this material.

Findings

Potential for small reverse currents in graphane p-n junctions

Predicted ideal I-V characteristics for graphane transistors

Carrier profiles and intrinsic parameters analyzed

Abstract

Graphane is a semiconductor with an energy gap, obtained from hydrogenation of the two-dimensional grapheme sheet. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and n regions can be defined so that p-n junctions become feasible with small reverse currents. Our recent analysis has shown that an ideal I-V characteristic for this type of junctions may be expected. Here, we predict the behavior of bipolar juncrion transistors based on graphane. Profiles of carriers and intrinsic parameters of the graphane transistor are calculated and discussed.