Elastic Barriers and Formation of Nanoscale Switching Networks

TL;DR

This paper investigates the elastic mechanisms behind the formation of reversible nanoscale switching networks in silicon oxide thin films, emphasizing the importance of vertical edge geometry for filament formation.

Contribution

It introduces an elastic model explaining the necessity of vertical edges in forming stable nanoscale switching networks in SiOx films, expanding understanding of the formation process.

Findings

Vertical edges are crucial for NSN formation.

The formation mechanism is intrinsic and not limited to edges.

Stable NSN can form anywhere in the SiOx film with the right geometry.

Abstract

Thin films of silicon oxide (SiOx) are mixtures of semiconductive c-Si nanoclusters (NC) embedded in an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables the NC to form semiconductive filamentary arrays when driven by an applied field. The field required to form reversible nanoscale switching networks (NSN) decreases rapidly within a few cycles, or by annealing at 600 C in even fewer cycles, and is stable to 700C. Here we discuss an elastic mechanism that explains why a vertical edge across the planar Si-SiOx interface is necessary to form NSN. The discussion shows that the formation mechanism is intrinsic and need not occur locally at the edge, but can occur anywhere in the SiOx film, given the unpinned nanoscale vertical edge geometry.