Location of the Energy Levels of the Rare-Earth Ion in BaF2 and CdF2

TL;DR

This paper determines the energy level positions of rare-earth ions in BaF2 and CdF2 crystals and analyzes how these positions influence charge capture, luminescence, and defect formation.

Contribution

It provides new insights into the energy level locations of RE ions in BaF2 and CdF2 and their impact on optical and defect properties.

Findings

Energy levels of RE ions are mapped in the band diagrams.

Differences in luminescence are linked to energy level positions.

RE ions influence charge capture and defect formation.

Abstract

The location of the energy levels of rare-earth (RE) elements in the energy band diagram of BaF2 and CdF2 crystals is determined. The role of RE3+ and RE2+ ions in the capture of charge carriers, luminescence, and the formation of radiation defects is evaluated. It is shown that the substantial difference in the luminescence properties of BaF2:RE and CdF2:RE is associated with the location of the excited energy levels in the band diagram of the crystals.