Stimulated emission of terahertz radiation by semiconductor microcavities
K.V. Kavokin, M.A. Kaliteevski, R. A. Abram, A.V. Kavokin, S., Sharkova, and I.A. Shelykh

TL;DR
This paper demonstrates that semiconductor microcavities in the strong coupling regime can generate stimulated terahertz radiation through polariton mode splitting and exciton state mixing, functioning as THz sources.
Contribution
It introduces a novel method to produce stimulated THz radiation using planar semiconductor microcavities in the polariton laser regime.
Findings
THz photons emitted at polariton mode splitting frequency
Optical transition enabled by mixing of polariton and exciton states
Stimulated emission achieved in polariton laser regime
Abstract
We show that planar semiconductor microcavities in the strong coupling regime can be used as sources of stimulated terahertz (THz) radiation. Emitted THz photons would have a frequency of the spliting of the cavity polariton modes. The optical transition between upper and lower polariton branches is allowed due to mixing of the upper polariton state with one of excited exciton states. This transition is stimulated in the polariton laser regime.
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