Graphene field effect transistors with ferroelectric gating

TL;DR

This paper investigates ferroelectric gating in graphene FETs, revealing how background doping controls hysteresis and enabling reliable, non-volatile memory switching with significant resistance changes.

Contribution

It provides a quantitative analysis of ferroelectric gating effects and demonstrates control of hysteresis via background doping, leading to robust non-volatile memory operation.

Findings

Background doping shifts ferroelectric hysteresis unidirectionally.

Achieved over 500% resistance change in graphene-ferroelectric FETs.

Demonstrated reproducible non-volatile switching over 10^5 cycles.

Abstract

Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (nBG) provided by normal dielectric gating. More importantly, we prove that nBG can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric FETs with resistance change over 500% and reproducible no-volatile switching over 10^5 cycles.