SWNT-array resonant MOS transistor

TL;DR

This paper demonstrates that horizontal arrays of single wall carbon nanotubes can serve as resonant gate electrodes in MOSFETs, enabling integrated nano-electromechanical systems with tunable resonance frequencies.

Contribution

It introduces a novel NEMS device using SWNT arrays as vibrating gates, combining mechanical resonance with silicon-based detection in a compact form.

Findings

Resonance frequency of 120-150 MHz observed.

SWNT arrays behave as cohesive, elastic membranes.

Resonant frequency tunable by gate voltage.

Abstract

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated siliconbased motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNTs arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.