Polarization-engineered GaN/InGaN/GaN tunnel diodes

TL;DR

This paper presents the design and experimental demonstration of polarization-engineered GaN/InGaN/GaN tunnel diodes with record-high current density and low turn-on voltage, highlighting their potential for advanced optoelectronic applications.

Contribution

It introduces a novel polarization-engineered GaN/InGaN/GaN tunnel diode design with high current density and low voltage, validated through experimental growth and measurements.

Findings

Achieved a current density of 118 A/cm2 at 1V reverse bias.

Maximum current density reached 9.2 kA/cm2, the highest in III-nitride tunnel junctions.

Demonstrated potential for broad optoelectronic and electronic applications.

Abstract

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.