Channeling in direct dark matter detection II: channeling fraction in Si and Ge crystals

TL;DR

This paper estimates the fraction of channeled recoiling ions in silicon and germanium crystals for dark matter detection, using historical analytic models and experimental data to improve understanding of ionization signals.

Contribution

It applies classical channeling models to dark matter detection scenarios, providing estimates of channeling fractions in Si and Ge crystals based on experimental data.

Findings

Estimated channeling fractions for Si and Ge crystals.

Validated models against dopant implantation data.

Enhanced understanding of ionization signals in dark matter detectors.

Abstract

The channeling of the ion recoiling after a collision with a WIMP changes the ionization signal in direct detection experiments, producing a larger signal than otherwise expected. We give estimates of the fraction of channeled recoiling ions in Si and Ge crystals using analytic models produced since the 1960's and 70's to describe channeling and blocking effects. We used data obtained to avoid channeling in the implantation of dopants in Si crystals to test our models.