Shielded Ohmic Contact (ShOC) Rectifier: A New Metal-Semiconductor Device with Excellent Forward and Reverse Characteristics

TL;DR

The paper introduces the Shielded Ohmic Contact (ShOC) rectifier, a novel device that combines low forward voltage drop with minimal reverse leakage, achieved through a trench shielding structure with high barrier metal.

Contribution

It presents a new device structure, the ShOC rectifier, which enhances reverse blocking while maintaining low forward conduction, supported by 2D numerical simulations.

Findings

Low forward voltage drop during conduction

Significantly reduced reverse leakage current

Superior performance demonstrated through simulations

Abstract

We report a new structure, called the Shielded Ohmic Contact (ShOC) rectifier which utilizes trenches filled with a high barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the Ohmic contact conducts with a low forward drop. However, when reverse biased, the Ohmic contact is completely shielded by the high barrier Schottky contact resulting in a low reverse leakage current. Two dimensional numerical simulation is used to evaluate and explain the superior performance of the proposed ShOC rectifier.