Silicon-On-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performance: A Two-Dimensional Simulation Study

TL;DR

This paper presents a 2D simulation study demonstrating that a Lateral Dual Sidewall Schottky (LDSS) structure on SOI significantly enhances rectifier performance by reducing forward voltage and leakage current while increasing breakdown voltage.

Contribution

The study introduces the LDSS concept on SOI and provides simulation evidence of its improved electrical characteristics over conventional Schottky rectifiers.

Findings

Lower forward voltage drop

Reduced reverse leakage current

Higher breakdown voltage

Abstract

In this paper, we demonstrate that the performance of silicon Schottky rectifiers on SOI can be significantly improved using a Lateral Dual Sidewall Schottky (LDSS) concept. Our results based on numerical simulation show that the LDSS structure on SOI has low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier.