New Silicon Carbide (SiC) Hetero-Junction Darlington Transistor

TL;DR

This paper introduces a novel SiC hetero-junction Darlington transistor that significantly improves current gain by combining different SiC polytypes, promising enhanced performance for high power and temperature applications.

Contribution

It presents the first design of a SiC hetero-junction Darlington transistor using 3C-SiC and 4H-SiC, achieving high current gain through heterojunction formation.

Findings

High current gain achieved due to heterojunction

Performance analysis confirms improved efficiency

First demonstration of SiC hetero-junction Darlington transistor

Abstract

Basic SiC bipolar transistors have been studied in the past for their applications where high power or high temperature operation is required. However since the current gain in SiC bipolar transistors is very low and therefore, a large base drive is required in high current applications. Therefore, it is important to enhance the current gain of SiC bipolar transistors. Using two dimensional mixed mode device and circuit simulation, for the first time, we report a new Darlington transistor formed using two polytypes 3C-SiC and 4H-SiC having a very high current gain as a result of the heterojunction formation between the emitter and the base of transistor. The reasons for the improved performance are analyzed.