A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

TL;DR

This paper introduces a novel Stepped Oxide Hetero-Material Trench power MOSFET with varied gate oxide thicknesses and materials, achieving improved breakdown voltage, transconductance, and switching performance through 2D simulations.

Contribution

The paper presents a new MOSFET design with stepped oxide and hetero-material gates, enhancing electrical performance and switching speed over conventional devices.

Findings

32% higher breakdown voltage

25% faster switching delays

20% increased transconductance

Abstract

In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gates) and having different gate oxide thicknesses (increasing from source side to drain side). The different gate oxide thickness serves the purpose of simultaneously achieving (i) a good gate control on the channel charge and (ii) a lesser gate to drain capacitance. As a result, we obtain higher transconductance as well as reduced switching delays, making the proposed device suitable for both RF amplification and high speed switching applications. In addition, the sandwiched gate with different work function gate materials modifies the electric field profile in the channel resulting in an improved breakdown voltage. Using two-dimensional simulations, we have shown that the proposed device structure exhibits about 32% enhancement in breakdown voltage, 25% reduction in switching delays, 20% enhancement in peak transconductance and 10% reduction in figure of merit (product of ON-resistance and gate charge) as compared to the conventional trench gate MOSFET.