New Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET): Design and Analysis using Two-dimensional Simulation

TL;DR

This paper introduces a novel SBMFET device with a Schottky gate, demonstrating improved performance and simplified fabrication through two-dimensional simulation, potentially impacting medium-power switching applications.

Contribution

The paper presents the design and simulation analysis of a new SBMFET with a Schottky gate, simplifying fabrication and enhancing device performance over conventional BMFETs.

Findings

Improved current gain in SBMFET compared to BMFET

Same breakdown voltage and ON-voltage drop as conventional BMFET

Simpler fabrication process without deep thermal diffusion

Abstract

A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses the Schottky gate formed on the silicon planar surface for injecting minority carriers into the drift region. The SBMFET is demonstrated to have improved current gain, identical breakdown voltage and ON-voltage drop when compared to the conventional BMFET. Since the fabrication of the SBMFET is much simpler and obliterates the need for deep thermal diffusion of P+-gates, the SBMFET is expected to be of great practical importance in medium-power high-current switching applications.