A New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET - Two-dimensional Analytical Modeling and Simulation

TL;DR

This paper introduces a novel Dual Material Double Gate (DMDG) SOI MOSFET that significantly reduces short channel effects and enhances device performance through an analytical model validated by simulations.

Contribution

The paper presents the first analytical model for the DMDG SOI MOSFET, demonstrating its advantages over traditional DG structures in suppressing short channel effects.

Findings

Reduced short channel effects due to surface potential step

Increased transconductance compared to DG MOSFET

Decreased drain conductance and improved voltage gain

Abstract

In this paper, we present the unique features exhibited by modified asymmetrical Double Gate (DG) silicon on insulator (SOI) MOSFET. The proposed structure is similar to that of the asymmetrical DG SOI MOSFET with the exception that the front gate consists of two materials. The resulting modified structure, Dual Material Double Gate (DMDG) SOI MOSFET, exhibits significantly reduced short channel effects when compared with the DG SOI MOSFET. Short channel effects in this structure have been studied by developing an analytical model. The model includes the calculation of the surface potential, electric field, threshold voltage and drain induced barrier lowering. A model for the drain current, transconductance, drain conductance and voltage gain is also discussed. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. We further demonstrate that the proposed DMDG structure provides a simultaneous increase in the transconductance and a decrease in the drain conductance when compared with the DG structure. The results predicted by the model are compared with those obtained by two-dimensional simulation to verify the accuracy of the proposed analytical model.