Metal-insulator transition in hydrogenated graphene as manifestation of quasiparticle spectrum rearrangement of anomalous type

TL;DR

This paper investigates how spectrum rearrangement in hydrogenated graphene signals a metal-insulator transition, linking experimental observations with theoretical Lifshitz impurity models.

Contribution

It establishes spectrum rearrangement as a precursor to the metal-insulator transition in hydrogenated graphene, supported by theoretical and experimental comparison.

Findings

Spectrum rearrangement precedes the metal-insulator transition.

The transition is of Anderson type due to Fermi level and mobility edge coincidence.

Theoretical Lifshitz impurity model aligns with experimental data.

Abstract

We demonstrate that the spectrum rearrangement can be considered as a precursor of the metal-insulator transition observed in graphene dosed with hydrogen atoms. The Anderson-type transition is attributed to the coincidence between the Fermi level and the mobility edge, which appearance is induced by the spectrum rearrangement. Available experimental data are thoroughly compared to the theoretical results for the Lifshitz impurity model.