Trapping-detrapping fluctuations in organic space-charge layers

TL;DR

This paper introduces a trapping-detrapping model to explain current fluctuations in organic semiconductors, linking trap ionization to noise behavior and validating the model through experimental data.

Contribution

The paper presents a novel trapping-detrapping model that correlates trap ionization with current noise, validated by experimental data in organic semiconductors.

Findings

Model accurately predicts noise behavior at trap-filling transition

Estimates trap concentration and energy levels from noise data

Experimental validation confirms the model's effectiveness

Abstract

A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors (polyacenes) operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage characteristics, is related to the relative current noise spectral density at the trap-filling transition. The agreement between theory and experiments validates the model and provides an estimate of the concentration and energy level of deep traps.