Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays:A Comprehensive Study

TL;DR

This comprehensive study reviews leakage current reduction techniques in poly-Si TFTs for LCDs, introduces the novel Triple Gate poly-Si TFT structure, and demonstrates its superior performance through simulation.

Contribution

It is the first comprehensive literature review on leakage reduction techniques and introduces the innovative TG-TFT device with significantly reduced leakage current.

Findings

TG-TFT shows several orders of magnitude lower leakage current.

Simulation confirms the effectiveness of ACMG control in TG-TFT.

The study provides a detailed comparison of existing techniques.

Abstract

This paper critically examines the leakage current reduction techniques for improving the performance of poly-Si TFTs used in active matrix liquid crystal displays. This is a first comprehensive study in literature on this topic. The review assesses important proposals to circumvent the leakage current problem in poly-Si TFTs and a short evaluation of strengths and weaknesses specific to each method is presented. Also, a new device structure called the Triple Gate poly-Si TFT (TG-TFT) is discussed. The key idea in the operation of this device is to make the dominant conduction mechanism in the channel to be controlled by the accumulation charge density modulation by the gate (ACMG) and not by the gate-induced grain barrier lowering (GIGBL). Using twodimensional and two-carrier device simulation, it is demonstrated that the TG-TFT exhibits a significantly diminished pseudo-subthreshold conduction leading to several orders of magnitude reduction in the OFF state leakage current when compared to a conventional poly-Si TFT. The reasons for the improved performance are explained.