Design Study for a SuperB Pixel Vertex Detector

TL;DR

This paper proposes a conceptual design for a low-mass, all-pixel vertex detector using CMOS technology, optimized for high luminosity e+e- B factories and capable of supporting advanced physics measurements.

Contribution

It introduces a novel all-pixel vertex detector design using CMOS quadruple well INMAPS process tailored for next-generation high-luminosity colliders.

Findings

Design achieves low mass and high radiation tolerance.

Comparative analysis shows advantages over baseline designs.

Suitable for time-dependent measurements in B physics.

Abstract

We present a conceptual design for a low-mass, all pixel vertex detector using the CMOS quadruple well INMAPS process, capable of working in the very high luminosities exceeding 10^36 /cm^2 /sec that can be expected at the next generation e+e- B factories. We concentrate on the vertexing requirements necessary for time-dependent measurements that are also relevant to searches for new physics beyond the Standard Model. We investigate different configurations and compare with the baseline designs for the SuperB and BaBar experiments.