Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations

TL;DR

This paper introduces a new Monte Carlo simulation code for modeling the channeling behavior of ultrarelativistic electrons in silicon crystals, providing detailed physical modeling and validation against experimental data.

Contribution

The paper presents a novel Monte Carlo code for simulating electron channeling in crystals, including detailed physical models and validation with experimental results.

Findings

Dechanneling lengths for (100), (110), and (111) planes estimated.

Dependence of channeling radiation intensity on crystal length calculated.

Good agreement with recent experimental data achieved.

Abstract

A new Monte Carlo code for the simulation of the channeling of ultrarelativistic charged projectiles in single crystals is presented. A detailed description of the underlying physical model and the computation algorithm is given. First results obtained with the code for the channeling of 855 MeV electrons in Silicon crystal are presented. The dechanneling lengths for (100), (110) and (111) crystallographic planes are estimated. In order to verify the code, the dependence of the intensity of the channeling radiation on the crystal dimension along the beam direction is calculated. A good agreement of the obtained results with recent experimental data is observed.