Effect of optical phonon scattering on the performance of GaN transistors

TL;DR

This paper develops a model based on optical phonon scattering to explain the unique electrical behaviors of short gate length GaN transistors, providing insights applicable to other semiconductor systems with strong electron-phonon interactions.

Contribution

A novel model that explains GaN transistor peculiarities due to optical phonon scattering and can be generalized to other materials with similar interactions.

Findings

The model successfully explains current drive and transconductance peculiarities.

It provides a simple framework for understanding transistor behavior in materials with strong optical phonon scattering.

Applicable to various semiconductor systems beyond GaN.

Abstract

A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high speed behavior of short gate length GaN transistors. The model is able to resolve these peculiarities, and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical phonon scattering is strong.