Epitaxial EuO Thin Films on GaAs
A. G. Swartz, J. Ciraldo, J. J. I. Wong, Yan Li, Wei Han, Tao Lin, S., Mack, J. Shi, D. D. Awschalom, and R. K. Kawakami
TL;DR
This paper reports the successful epitaxial growth of EuO thin films on GaAs substrates using reactive molecular beam epitaxy, achieving good magnetic properties despite lattice mismatch, with potential applications in spintronics.
Contribution
It introduces a method for growing EuO on GaAs with high-quality epitaxy and magnetic properties, utilizing an MgO diffusion barrier to address lattice mismatch issues.
Findings
EuO grows well on MgO(001) with excellent magnetic properties
Epitaxial EuO on GaAs is cube-on-cube
Kerr rotation of 0.57 degrees, Curie temperature of 69 K
Abstract
We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57{\deg}, a significant remanent magnetization, and a Curie temperature of 69 K.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.