Vertical Field-Effect Transistor Based on Wavefunction Extension

TL;DR

This paper introduces a novel vertical field-effect transistor mechanism where wavefunction extension between layers significantly enhances tunnel current, demonstrated in GaAs/AlGaAs devices and potentially applicable to other materials like graphene.

Contribution

It presents a new dual-layer transistor design leveraging wavefunction extension to control tunnel current, with experimental validation and potential for broader material applications.

Findings

Tunnel current increases by two orders of magnitude at cryogenic temperatures.

Wavefunction extension enables effective layer coupling in the device.

Design principles applicable to other 2D material systems like graphene.

Abstract

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.