On The Strength of Tribo-Emission in Sliding of Diamond on Single Crystal Silicon
Hisham A Abdel-aal

TL;DR
This paper investigates the tribo-emission during diamond sliding on single crystal silicon, proposing that pressure-induced semiconductor-to-metal transformation explains the observed decrease in emission signals.
Contribution
It introduces a new explanation for tribo-emission behavior based on phase transformation in silicon during sliding, contrasting with previous surface oxide explanations.
Findings
Pressure induces semiconductor-to-metal transformation in silicon under sliding conditions.
The transformation increases local conductivity, affecting tribo-emission signals.
The phase change explains the decrease in emission intensity over wear tracks.
Abstract
Triboemission is a phenomenon associated with the sliding of variety of materials. The phenomenon is thought to be related to wear of diamond tools used in precision machining of semiconductors. As such, the physics of emission has recently acquired importance. Many researchers studied emission during scratching of solid surfaces. They observed that the intensity of tribo-induced emission of the electrons, ions, and photons decrease in the order: insulator>semiconductor> conductor. Many experiments conducted to compare the emission of negatively-charged particles in case of the semiconductors Si with that from selected insulators have reported a clear decreasing trend of the tribo-emission intensity as contact progressed over the same wear track for diamond-on-Si. Despite that all of these experiments were performed in vacuum, the origin of the weak signals and the decrease of signal…
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