On the inner Double-Resonance Raman scattering process in bilayer graphene

TL;DR

This paper investigates the inner double-resonance Raman scattering process in bilayer graphene, providing improved SWM parameters and highlighting unresolved fundamental questions about the DR process.

Contribution

It introduces an analysis of the inner DR process in graphene, leading to more accurate SWM parameters and revealing ongoing uncertainties in the DR mechanism.

Findings

SWM parameters are in better agreement with other experimental data

Inner DR process analysis improves understanding of phonon and electronic dispersion

Highlights unresolved fundamental questions in the DR process

Abstract

The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. In this work we analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques. This result possibly shows that there is still a fundamental open question concerning the double resonance process in graphene systems.