Transport and magnetic properties of Co-doped BaFe_{2}As_{2} epitaxial thin films

TL;DR

This study investigates the electrical and magnetic properties of Co-doped BaFe₂As₂ epitaxial thin films, revealing significant anomalous Hall effects, high critical current density, and the influence of extended defects.

Contribution

It provides detailed measurements of transport and magnetic properties of Co-doped BaFe₂As₂ thin films, highlighting the role of extended defects and ferromagnetic components.

Findings

Hall resistivity shows anomalous Hall effect due to ferromagnetic components

Critical current density reaches ~2 MA/cm² at low temperatures

Magneto-optical imaging reveals extended defects in the films

Abstract

We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.