Gapped Ferromagnetic Graphene Nanoribbons
D. Hou, J. H. Wei, S. J. Xie

TL;DR
This paper proposes a theoretical design of a ferromagnetic semiconductor based on graphene nanoribbons terminated with organic magnets, showing potential for spintronic applications due to a large spin-split gap and 100% spin polarization.
Contribution
It introduces a novel all-organic ferromagnetic semiconductor design by terminating zigzag graphene nanoribbons with organic magnets, demonstrating ferromagnetism without d electrons.
Findings
Large spin-split gap with 100% spin polarization near Fermi energy
Ferromagnetism driven by c-c exchange and spin-lattice interactions
Potential application in spin transistors
Abstract
We theoretically design a graphene-based all-organic ferromagnetic semiconductor by terminating zigzag graphene nanoribbons (ZGNRs) with organic magnets. A large spin-split gap with 100% spin polarized density of states near the Fermi energy is obtained, which is of potential application in spin transistors. The interplays among electron, spin and lattice degrees of freedom are studied using the first-principles calculations combined with fundamental model analysis. All of the calculations consistently demonstrate that although no d electrons existing, the antiferromagnetic \pi-\pi exchange together with the strong spin-lattice interactions between organic magnets and ZGNRs make the ground state ferromagnetic. The fundamental physics makes it possible to optimally select the organic magnets towards practical applications.
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