Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers

TL;DR

This study investigates dopant-enhanced solid phase epitaxy in buried amorphous silicon layers, modeling the kinetics with a Fermi level shifting approach and considering band bending effects.

Contribution

It introduces a comprehensive model for dopant-enhanced SPE rates incorporating Fermi level shifts and band bending in buried amorphous silicon layers.

Findings

Dopant profiles significantly influence SPE rates.

The generalized Fermi level shifting model accurately predicts dopant effects.

Band bending impacts interface motion during annealing.

Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a con- centration range of 1 - 30 x 1019 /cm3. Anneals were performed in air over the temperature range 460-660 oC and the rate of interface motion was monitored us- ing time resolved reflectivity. The dopant-enhanced SPE rates were modeled with the generalized Fermi level shifting model using degenerate semiconductor statis- tics. The effect of band bending between the crystalline and amorphous sides of the interface is also considered.