Microwave response of a magnetic single-electron transistor

TL;DR

This paper investigates how microwave-induced magnetization precession in a ferromagnetic single-electron transistor generates measurable voltages, with potential applications in nanoscale microwave detection.

Contribution

It introduces a novel mechanism for microwave detection using a ferromagnetic single-electron transistor with Coulomb blockade effects enhancing the response.

Findings

Microwave-driven precession induces a measurable reverse bias voltage.

Coulomb blockade enhances and nonlinearizes the voltage response.

Potential for developing nanoscale microwave detectors.

Abstract

We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this pumping produces a measurable reverse bias voltage, which can be enhanced and made highly nonlinear by Coulomb blockade in the dot. The dependence of this bias on the power and spectrum of microwave irradiation may be utilized to develop nanoscale microwave detectors analogous to single-electron transistor-based electrostatic sensors and nanoelectromechanical devices.