Atom chips on direct bonded copper substrates

TL;DR

This paper demonstrates the use of direct bonded copper (DBC) substrates for fabricating high power atom chips with benefits like high thermal conductivity, rapid fabrication, and complex structures, advancing atom chip technology.

Contribution

It introduces DBC as a new material platform for atom chips, detailing fabrication methods, optimal wire geometries, and thermal performance for high-power applications.

Findings

Optimal wire aspect ratio of 0.84:1 for magnetic field gradient

Test chip supports 100 A current for 2 seconds without failure

Two fabrication methods and mask options for DBC atom chips

Abstract

We present the use of direct bonded copper (DBC) for the straightforward fabrication of high power atom chips. Atom chips using DBC have several benefits: excellent copper/substrate adhesion, high purity, thick (> 100 microns) copper layers, high substrate thermal conductivity, high aspect ratio wires, the potential for rapid (< 8 hr) fabrication, and three dimensional atom chip structures. Two mask options for DBC atom chip fabrication are presented, as well as two methods for etching wire patterns into the copper layer. The wire aspect ratio that optimizes the magnetic field gradient as a function of power dissipation is determined to be 0.84:1 (height:width). The optimal wire thickness as a function of magnetic trapping height is also determined. A test chip, able to support 100 A of current for 2 s without failing, is used to determine the thermal impedance of the DBC. An assembly using two DBC atom chips to provide magnetic confinement is also shown.